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| SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR. MMBTA13/14 EPITAXIAL PLANAR NPN TRANSISTOR L E B L A G MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collertor Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCES VEBO IC PC * Tj Tstg RATING 30 30 10 500 350 150 -55 150 0.6mm. UNIT V V 2 3 1 P P C V mA mW DIM A B C D E G H J K L M N P MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 N H M 1. EMITTER 2. BASE 3. COLLECTOR * : Package Mounted On 99.5% Alumina 10 8 K SOT-23 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector-Emitter Breakdown Voltage Emitter Cut-off Current Emitter Cut-off Current MMBTA13 DC Current Gain MMBTA14 MMBTA13 MMBTA14 Collector-Emitter Saturation Voltage Base-Emitter Voltage Current Gain Bandwith Product ) TEST CONDITION IC=0.1mA VCB=30V VEB=10V IC=10mA, VCE=5V MIN. 30 5,000 10,000 10,000 20,000 125 TYP. MAX. 100 100 1.5 2.0 V V MHz UNIT V nA nA SYMBOL VCES ICBO IEBO hFE * IC=100mA, VCE=5V VCE(sat) VBE fT IC=100mA, IB=0.1mA IC=100mA, VCE=5V IC=10mA, f=100MHz, VCE=5V *Pulse Test : Pulse Width 300 S, Duty Cycle 2.0% MARK SPEC TYPE MARK MMBTA13 AIX MMBTA14 AHX Marking Lot No. Type Name AX 1999. 11. 30 Revision No : 4 J D 1/2 MMBTA13/14 h FE - I 200K DC CURRENT GAIN h FE 100K 50K 30K C f T - IC TRANSITION FREQUENCY f T (MHz) 500 VCE =5V VCE =5V 300 100 10K 5K 3K 1 3 10 30 100 300 1K COLLECTOR CURRENT I C (A) 50 30 1 3 5 10 30 50 100 COLLECTOR CURRENT I C (mA) V BE (sat), VCE (sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VBE (sat), VCE (sat) (V) COLLECTOR CURRENT I C (mA) 5 3 I C =1000I B I C - V BE 200 100 50 30 VCE =5V VBE (sat) 1 0.5 0.3 0.2 5 10 VCE (sat) 10 5 3 1 30 50 100 300 500 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 COLLECTOR CURRENT I C (mA) BASE-EMITTER VOLTAGE V BE (V) 1999. 11. 30 Revision No : 4 2/2 |
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